Ma, T. P.
著者名典拠詳細を表示
| 著者の属性 | 個人 |
|---|---|
| 一般注記 | Ionizing radiation effects in MOS devices and circuits, c1989: CIP t.p. (T.P. Ma, Dept. of Electrical Engin, Yale U., New Haven, Conn.) |
| コード類 | 典拠ID=AU20040532 NCID=DA0342318X |
| 1 | Ionizing radiation effects in MOS devices and circuits / edited by T.P. Ma and Paul V. Dressendorfer New York : Wiley , c1989 |