Pearton, S. J.
著者名典拠詳細を表示
| 著者の属性 | 個人 |
|---|---|
| 一般注記 | Defects in electronic materials, c1988: CIP t.p. (S. J. Pearton; AT&T Bell Laboratories, Murry Hill, N.J., USA) EDSRC:GaN and related materials / edited by Stephen J. Pearton(Gordon and Breach, c1997) |
| から見よ参照 | Pearton, Stephen J. |
| コード類 | 典拠ID=AU20007463 NCID=DA02891863 |
| 1 | Gallium oxide : technology, devices and applications / edited by Stephen Pearton, Fan Ren, Michael Mastro : pbk. - Amsterdam : Elsevier , c2019 |
| 2 | Hydrogen in crystalline semiconductors / S.J. Pearton, J.W. Corbett, M. Stavola : ger : pbk - . - Berlin ; New York : Springer-Verlag , c1992 |